PSYCH OpenIR  > 中国科学院心理研究所回溯数据库(1956-2010)
GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM
QIN, FG; WANG, XM; YANG, GR; LIN, LY
1984
Source PublicationCHINESE PHYSICS
ISSN0273-429X
SubtypeArticle
Volume4Issue:4Pages:976-980
Indexed BySCI
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:A1984AFK8000038
WOS HeadingsScience & Technology ; Physical Sciences
Citation statistics
Document Type期刊论文
Identifierhttp://ir.psych.ac.cn/handle/311026/25995
Collection中国科学院心理研究所回溯数据库(1956-2010)
Recommended Citation
GB/T 7714
QIN, FG,WANG, XM,YANG, GR,et al. GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM[J]. CHINESE PHYSICS,1984,4(4):976-980.
APA QIN, FG,WANG, XM,YANG, GR,&LIN, LY.(1984).GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM.CHINESE PHYSICS,4(4),976-980.
MLA QIN, FG,et al."GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM".CHINESE PHYSICS 4.4(1984):976-980.
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